InGaAsSb/GaAsSb quantum dot structures
نویسندگان
چکیده
This work studies the modal gain from I n x G a 1 − A s y S b / $I{n_x}G{a_{1 - x}}A{s_y}S{b_{1 y}}/GaAsSb$ quaternary quantum dots (QD) structures at different mole fractions of structure. The are more flexible in attaining lattice-matching systems. First, In- and As-mole varied. Four In-mole studied ( = 0.01 , 0.03 0.05 $(x\; \;0.01,\;0.03,\;0.05,\;$ 0.07), their emitted wavelengths cover range 571.4 5000 nm $571.4 5000\ {\rm nm}$ . Both fraction increment results red-shifted wavelength. Doping is also investigated where exhibited five times gain, wavelength blue-shifted under doping. multi-peak behaviour by these structures, which essential applications for choosing required These promise that can UV, visible, infrared (IR) ranges.
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ژورنال
عنوان ژورنال: Micro & Nano Letters
سال: 2023
ISSN: ['1750-0443']
DOI: https://doi.org/10.1049/mna2.12159